Author Info
Name
Affiliation
Papers
SANG-YUN KIM
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
1
Collaborators
Citations 
PageRank 
27
0
0.34
Referers 
Referees 
References 
0
80
8
Title
Citations
PageRank
Year
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques00.342021