Name
Title | Citations | PageRank | Year |
|---|---|---|---|
| III-V semiconductor nanowires for future devices | 0 | 0.34 | 2014 |
| Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy | 0 | 0.34 | 2009 |
| Gated hybrid Hall effect device on silicon | 1 | 0.36 | 2005 |