Title | Citations | PageRank | Year |
---|---|---|---|
Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications. | 0 | 0.34 | 2018 |
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. | 0 | 0.34 | 2016 |
Sharp-switching Z2-FET device in 14 nm FDSOI technology. | 0 | 0.34 | 2015 |