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YIH WANG
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Name
Affiliation
Papers
YIH WANG
Intel Corp., Hillsboro, OR, USA
10
Collaborators
Citations
PageRank
59
73
10.75
Referers
Referees
References
304
73
21
Search Limit
100
304
Publications (10 rows)
Collaborators (59 rows)
Referers (100 rows)
Referees (73 rows)
Title
Citations
PageRank
Year
An 89tops/W And 16.3tops/Mm(2) All-Digital Sram-Based Full-Precision Compute-In Memory Macro In 22nm For Machine-Learning Edge Applications
1
0.35
2021
15.3 A 351tops/W And 372.4gops Compute-In-Memory Sram Macro In 7nm Finfet Cmos For Machine-Learning Applications
2
0.40
2020
2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology
0
0.34
2014
13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology
14
1.73
2014
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.
1
0.38
2013
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation.
3
0.49
2011
Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design
10
0.81
2011
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management
19
2.61
2010
A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology
8
0.71
2009
A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management.
15
2.94
2009
1