Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal | 2 | 0.70 | 2009 |
A 125-Ghz 140-Mw Ingaas/Inp Composite-Channel Hemt Mmic Power Amplifier Module | 0 | 0.34 | 2009 |
Foreword - Special Section On Heterostructure Microelectronics With Twhm2005 | 0 | 0.34 | 2006 |
Foreword - Special Section On Heterostructure Microelectronics With Twhm2005 | 0 | 0.34 | 2006 |
W-Band Active Integrated Antenna Oscillator Based On Full-Wave Design Methodology And 0.1-Mu M Gate Inp-Based Hemts' | 0 | 0.34 | 2006 |
Novel Fabrication Technology For High Yield Sub-100-Nm-Gate Inp-Based Hemts | 0 | 0.34 | 2006 |
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors | 0 | 0.34 | 2004 |
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors | 0 | 0.34 | 2004 |