Author Info
Name
Affiliation
Papers
THOMAS HOLTIJ
Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany
5
Collaborators
Citations 
PageRank 
6
8
3.07
Referers 
Referees 
References 
25
11
6
Title
Citations
PageRank
Year
Improved analytical potential modeling in double-gate tunnel-FETs20.772014
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs00.342014
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects.00.342014
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current.40.682014
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs20.952013