Author Info
Name
Affiliation
Papers
HANGBING LV
Department of Microelectronics, ASIC&System State Key Lab, Fudan University, Shanghai 200433, China
11
Collaborators
Citations 
PageRank 
73
1
4.09
Referers 
Referees 
References 
2
40
8
Title
Citations
PageRank
Year
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices00.342022
Investigation Of Weight Updating Modes On Oxide-Based Resistive Switching Memory Synapse Towards Neuromorphic Computing Applications00.342021
High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications00.342021
Ion-Gated Transistor: An Enabler For Sensing And Computing Integration00.342020
A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm<sup>2</sup> using Sneaking Current Suppression and Compensation Techniques00.342020
A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme00.342020
A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key00.342019
A High Reliability 500 Mu W Resistance-To-Digital Interface Circuit For Sno2 Gas Sensor Iot Applications00.342019
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F<sup>2</sup> and K-means Clustering for Power Reduction00.342018
A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement00.342017
Electronic properties of GST for non-volatile memory10.712006