| Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. | 0 | 0.34 | 2011 |
| Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design. | 2 | 0.64 | 2011 |
| On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. | 1 | 0.41 | 2004 |
