Author Info
Name
Affiliation
Papers
M. NAFRÍA
Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, QC-3055 Edifici Q-campus UAB, Bellaterra, Barcelona 08193, Spain
4
Collaborators
Citations 
PageRank 
10
4
2.20
Referers 
Referees 
References 
10
0
0
Title
Citations
PageRank
Year
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced—CAFM00.342005
Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics30.752005
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM00.342003
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope10.772001