Name
Papers
Collaborators
SORIN CRISTOLOVEANU
19
71
Citations 
PageRank 
Referers 
3
6.73
16
Referees 
References 
13
3
Title
Citations
PageRank
Year
Thin-Film FD-SOI BIMOS Topologies for ESD Protection00.342019
Temperature and Gate Leakage Influence on the Z<sup>2</sup>-FET Memory Operation00.342019
Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications.00.342018
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes.00.342016
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology00.342015
Back-gate effects and detailed characterization of junctionless transistor00.342015
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution00.342015
EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region00.342015
Low-frequency noise in bare SOI wafers: Experiments and model00.342015
Preliminary 3D TCAD electro-thermal simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology00.342015
Sharp-switching Z2-FET device in 14 nm FDSOI technology.00.342015
Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications10.482014
Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs00.342014
Improved modeling of isolated EDMOS in advanced CMOS technologies00.342013
Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects.00.342013
Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body.10.432012
Multibranch mobility characterization: Evidence of carrier mobility enhancement by back-gate biasing in FD-SOI MOSFET.00.342012
Z2-FET used as 1-transistor high-speed DRAM00.342012
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs10.412011