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YASUYUKI MIYAMOTO
Author Info
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Name
Affiliation
Papers
YASUYUKI MIYAMOTO
Tokyo Inst Technol, Dept Phys Elect, Tokyo 152, Japan
13
Collaborators
Citations
PageRank
31
1
4.68
Referers
Referees
References
3
9
2
Publications (13 rows)
Collaborators (31 rows)
Referers (3 rows)
Referees (9 rows)
Title
Citations
PageRank
Year
Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides
0
0.34
2019
Type-Ii Hfs2/Mos2 Heterojunction Transistors
0
0.34
2018
Vacuum Annealing And Passivation Of Hfs2 Fet For Mitigation Of Atmospheric Degradation
0
0.34
2017
Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation.
0
0.34
2017
Recent Progress In Compound Semiconductor Electron Devices
0
0.34
2016
Delay Time Component Of Ingaas Mosfet Caused By Dynamic Source Resistance
0
0.34
2014
Reduction Of Base-Collector Capacitance In Inp/Ingaas Dhbt With Buried Sio2 Wires
0
0.34
2012
Reduction Of Access Resistance Of Inp/Ingaas Composite-Channel Mosfet With Back-Source Electrode
0
0.34
2012
Fabrication Of Inp/Ingaas Shbt On Si Substrate By Using Transferred Substrate Process
0
0.34
2012
Fabrication Of Inp/Ingaas Dhbts With Buried Sio2 Wires
0
0.34
2011
Estimation Of Collector Current Spreading In Ingaas Shbt Having 75-Nm-Thick Collector
1
0.63
2010
Numerical Analysis Of The Effect Of P-Regions On The I-V Kink In Gaas Mesfets
0
0.34
2007
Current Gain And Voltage Gain In Hot Electron Transistors Without Base Layer
0
0.34
2006
1