Author Info
Name
Affiliation
Papers
S. SATO
Frontier Research Center, Tokyo Institute of Technology, Japan
1
Collaborators
Citations 
PageRank 
11
0
0.34
Referers 
Referees 
References 
0
0
0
Title
Citations
PageRank
Year
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise00.342011