Author Info
Name
Affiliation
Papers
RIICHIRO TAKAISHI
Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan
1
Collaborators
Citations 
PageRank 
10
0
0.34
Referers 
Referees 
References 
0
9
2
Title
Citations
PageRank
Year
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.00.342017