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GEUNTAE PARK
Author Info
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Name
Affiliation
Papers
GEUNTAE PARK
Samsung Elect, Hwaseong, South Korea
3
Collaborators
Citations
PageRank
92
0
1.01
Referers
Referees
References
0
80
8
Publications (3 rows)
Collaborators (92 rows)
Referers (0 rows)
Referees (80 rows)
Title
Citations
PageRank
Year
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process.
0
0.34
2022
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques
0
0.34
2021
22.2 An 8.5gb/S/Pin 12gb-Lpddr5 Sdram With A Hybrid-Bank Architecture Using Skew-Tolerant, Low-Power And Speed-Boosting Techniques In A 2nd Generation 10nm Dram Process
0
0.34
2020
1