Author Info
Name
Affiliation
Papers
WONTAE KIM
Samsung Electronics, Hwasung, Korea
2
Collaborators
Citations 
PageRank 
77
9
1.26
Referers 
Referees 
References 
42
60
2
Title
Citations
PageRank
Year
A 512gb 3b/Cell 7th-Generation 3d-Nand Flash Memory With 184mb/S Write Throughput And 2.0gb/S Interface00.342021
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory90.922017