Author Info
Name
Affiliation
Papers
HYUNG-KYU KIM
Samsung Electronics, Hwasung, Korea
2
Collaborators
Citations 
PageRank 
64
0
0.68
Referers 
Referees 
References 
0
24
1
Title
Citations
PageRank
Year
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking.00.342019
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices.00.342017