Name
Abstract | ||
|---|---|---|
Flash memories can undergo three different types of disturbances, DC-Programming, DC-Erasure, and Drain Disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults. We present optimal and near optimal algorithms to detect these faults in flash memories. |
Year | DOI | Venue |
|---|---|---|
2000 | 10.1109/ICVD.2000.812641 | VLSI Design |
Keywords | Field | DocType |
drain disturbance,present optimal,fault model,testing flash memories,different type,near optimal algorithm,flash memory,eprom,nonvolatile memory,tunneling,decoding,testing,fault detection,optimal control | Optimal control,Flash memory,Fault detection and isolation,Computer science,Automatic testing,Real-time computing,Electronic engineering,Non-volatile memory,Decoding methods,EPROM | Conference |
ISBN | Citations | PageRank |
0-7695-0487-6 | 15 | 1.52 |
References | Authors | |
3 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mohammad Gh. Mohammad | 1 | 103 | 10.98 |
| Kewal K. Saluja | 2 | 1483 | 141.49 |
| Alex Yap | 3 | 40 | 5.15 |