Title
Millimeter-Wave Voltage-Controlled Oscillators In 0.13-Mu M Cmos Technology
Abstract
This paper describes the design of CMOS millimeter-wave voltage controlled oscillators. Varactor, transistor, and inductor designs are optimized to reduce the parasitic capacitances. An investigation of tradeoff between quality factor and tuning range for MOS varactors at 24 GHz has shown that the polysilicon gate lengths between 0.18 and 0.24 mu m result both good quality factor (> 12) and C-max/C-min ratio (similar to 3) in the 0.13-mu m CMOS process used for the study. The components were utilized to realize a VCO operating around 60 GHz with a tuning range of 5.8 GHz. A 99-GHz VCO with a tuning range of 2.5 GHz, phase noise of -102.7 dBc/Hz at 10-MHz offset and power consumption of 7-15 mW from a 1.5-V supply and a 105-GHz VCO are also demonstrated. This is the CMOS circuit with the highest fundamental operating frequency. The lumped element approach can be used even for VCOs operating near 100-GHz and it results a smaller circuit area.
Year
DOI
Venue
2006
10.1109/JSSC.2006.874321
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Keywords
DocType
Volume
CMOS, lumped model, millimeter wave, MOS varactor, quality factor, transmission line, voltage-controlled oscillator (VCO)
Journal
41
Issue
ISSN
Citations 
6
0018-9200
8
PageRank 
References 
Authors
1.02
0
2
Name
Order
Citations
PageRank
C. Cao19214.45
K. K. O2283.85