Abstract | ||
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Memristors are emerging as a potential candidate for next-generation memory technologies, promising to deliver non-volatility at performance and density targets which were previously the domain of SRAM and DRAM. Silicon Physically Unclonable Functions (PUFs) have been introduced as a relatively new security primitive which exploit manufacturing variation resulting from the IC fabrication process to uniquely fingerprint a device instance or generate device-specific cryptographic key material. While silicon PUFs have been proposed which build on traditional memory structures, in particular SRAM, in this paper we present a memristor-based PUF which utilizes a weak-write mechanism to obtain cell behaviour which is influenced by process variation and hence usable as a PUF response. Using a model-based approach we evaluate memristor PUFs under random process variations and present results on the performance of this new PUF variant. |
Year | DOI | Venue |
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2013 | 10.7873/DATE.2013.096 | DATE |
Field | DocType | ISSN |
Dram,Memristor,Computer science,Semiconductor device fabrication,Network on a chip,Static random-access memory,Electronic engineering,Process variation,Physical unclonable function,Key (cryptography),Embedded system | Conference | 1530-1591 |
Citations | PageRank | References |
13 | 0.73 | 7 |
Authors | ||
3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Patrick Koeberl | 1 | 238 | 9.34 |
Ünal Kocabaş | 2 | 167 | 8.91 |
Ahmad-reza Sadeghi | 3 | 5463 | 334.69 |