Title
Nanopower subthreshold MCML in submicrometer CMOS technology
Abstract
This paper presents subthreshold MOS current-mode logic (MCML) circuits implemented in a commercial 0.25-µm CMOS technology. We propose the adoption of bulk-drain-connected pMOS transistors as loads for subthreshold MCML gates. The b-d connection extends the linear operating range of the load, thus increasing the output logic swing of the subthreshold MCML gate. Theoretical and measured results are presented for an MCML inverter and a ten-stage ring oscillator operating at supply voltages below the threshold-voltage value, with power consumption on the order of nanowatts. At a 300-mV supply, the oscillator works at a frequency of 638 Hz with a total power consumption of 345 pW.
Year
DOI
Venue
2009
10.1109/TCSI.2008.2008275
IEEE Trans. on Circuits and Systems
Keywords
Field
DocType
CMOS integrated circuits,CMOS logic circuits,MOS current-mode logic circuits,nanopower subthreshold MCML,submicrometer CMOS technology,Bulk–drain (b-d) connection,nanopower digital logic,subthreshold MOS current-mode logic (MCML),subthreshold circuits
Inverter,Ring oscillator,Computer science,Electronic engineering,Control engineering,CMOS,Subthreshold conduction,Electronic circuit,PMOS logic,Transistor,Electrical engineering,Threshold voltage
Journal
Volume
Issue
ISSN
56
8
1549-8328
Citations 
PageRank 
References 
6
0.81
9
Authors
3
Name
Order
Citations
PageRank
Francesco Cannillo1103.70
Christofer Toumazou226559.06
Tor Sverre Lande312845.26