Name
Abstract | ||
|---|---|---|
A novel nano electro mechanical system (NEMS) accelerated sensor which is based on a Pseudomorphic high electron mobility transistor (PHEMT) device with GaAs/AlGaAs/InGaAs is fabricated and demonstrated in this paper. The characteristics, including sensitivity and linearity of the studied device with different drain and gate bias voltage of PHEMT device, are measured and studied. Measured by the testing circuit, the accelerated sensor has good linearity and sensitivity when the PHEMT device works in the linear region and saturation region. The impacts of drain and gate voltages on the drain current has been discussed. The relationship between sensitivity and drain, gate bias voltage is analyzed. The new structure has high sensitivity and good linearity with different bias voltages. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/NEMS.2010.5592422 | NEMS |
Keywords | Field | DocType |
sensitivity,indium compounds,gate bias voltage,pseudomorphic high electron mobility transistor,dynamic response,phemt device,nano electro mechanical system,gallium arsenide,device linearity,testing circuit,saturation region,drain current,semiconductor device testing,accelerated sensor,drain voltage,nanoelectromechanical devices,phemt,gaas-algaas-ingaas,aluminium compounds,nems accelerated sensor,device sensitivity,power hemt,linear region,vibrations,logic gates,acceleration | Gallium arsenide,Logic gate,Analytical chemistry,Voltage,Linearity,High-electron-mobility transistor,Nanoelectromechanical systems,Materials science,AND gate,Biasing | Conference |
Volume | Issue | ISBN |
null | null | 978-1-4244-6543-9 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaojuan Jia | 1 | 1 | 1.16 |
| Binzhen Zhang | 2 | 12 | 7.98 |
| Jun Liu | 3 | 51 | 22.99 |
| Chenyang Xue | 4 | 16 | 9.07 |
| Tingting Hou | 5 | 13 | 5.61 |