Title
ETS-A: a new electrothermal simulator for CMOS VLSI circuits
Abstract
In this paper, we present a method for finding the CMOS VLSI chip temperature profile and the corresponding circuit performance by using a new electrothermal simulator, ETS-A. We use a sequence of procedures: layout extraction with x-y coordinates for individual transistors, fast timing-based power calculation, analytical thermal simulation using integral transform, followed by the electrothermal iterations until convergence. ETS-A takes advantage of the fast timing simulator while preserving the accuracy with use of temperature-dependent region-wise quadratic (RWQ) MOS transistor modeling techniques. The novel mixed 3-D & 1-D thermal simulator implemented in ETS-A efficiently takes into account the chip packaging and the thermal boundary conditions (BCs), which were often ignored in typical thermal simulations. With ETS-A, on-chip temperature profile can be calculated and further applied to guide the temperature-driven module placement as well as chip packaging designs
Year
DOI
Venue
1996
10.1109/EDTC.1996.494357
ED&TC
Field
DocType
ISSN
Convergence (routing),Computer science,Simulation,Integrated circuit packaging,Quadratic equation,Electronic engineering,CMOS,Chip,Transistor,Integral transform,Very-large-scale integration
Conference
1066-1409
ISBN
Citations 
PageRank 
0-8186-7424-5
5
1.29
References 
Authors
4
3
Name
Order
Citations
PageRank
Yi-Kan Cheng112126.99
Elyse Rosenbaum26121.99
Sung-Mo Steve Kang31198213.14