Abstract | ||
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This paper describes a broadband active terminal circuit and its application to a distributed amplifier. In this study, we first analyzed and compared three types of active terminal circuits using representative circuit configurations, namely, an active terminal circuit with a common-emitter BJT, an active terminal circuit with a Darlington BJT pair, and an active terminal circuit with cascode-connected BJTs. The simulation results showed that the active terminal circuit with cascode-connected BJTs kept the matching condition up to high frequency. After the simulation, we fabricated a distributed amplifier that used an active terminal circuit with cascode-connected BJTs. The RF amplifier achieved a flat gain of 9.7 +/- 1.0 dB over a range of 3-15 GHz. |
Year | DOI | Venue |
---|---|---|
2007 | 10.1093/ietele/e90-c.6.1203 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
distributed, amplifier, cascode-connected, Darlington pair | Distributed amplifier,Broadband,Electronic engineering,Bipolar junction transistor,Engineering,Electronic circuit,RF power amplifier,Darlington transistor,Electrical engineering,Wide band,Amplifier | Journal |
Volume | Issue | ISSN |
E90C | 6 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 |
Name | Order | Citations | PageRank |
---|---|---|---|
Hitoshi Hayashi | 1 | 5 | 2.28 |
Munenari Kawashima | 2 | 1 | 1.09 |
Tadao Nakagawa | 3 | 22 | 11.33 |
Kazuhiro Uehara | 4 | 45 | 13.26 |
Yoshihiro Takigawa | 5 | 8 | 2.82 |