Name
Title | ||
|---|---|---|
Fabrication Of Inp/Ingaas Shbt On Si Substrate By Using Transferred Substrate Process |
Abstract | ||
|---|---|---|
With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3 mA/mu m(2) were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after deembedding, a cutoff frequency (f(T)) of 510 GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed f(T) was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1587/transele.E95.C.1323 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
heterojunction bipolar transistor, InP, base-collector capacitance, transferred-substrate, heterogeneous integration | Substrate (chemistry),Electronic engineering,Engineering,Heterojunction bipolar transistor,Fabrication | Journal |
Volume | Issue | ISSN |
E95C | 8 | 0916-8524 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yutaro Yamaguchi | 1 | 1 | 0.70 |
| Takeshi Sagai | 2 | 0 | 0.34 |
| Yasuyuki Miyamoto | 3 | 1 | 4.68 |