Title
Accurate Distortion Prediction For Thermal Memory Effect In Power Amplifier Using Multi-Stage Thermal Rc-Ladder Network
Abstract
Distortion characteristics caused by the thermal memory effect in power amplifiers were accurately predicted using a multi-stage thermal RC-ladder network derived by simplifying the heat diffusion equation. Assuming a steep gradient of heat diffusion near an intrinsic transistor region in a semiconductor substrate, the steady state temperature, as well as the transient thermal response at the transistor region, was estimated. The thermal resistances and thermal capacitances were adjusted to fit a temperature distribution characteristic and a step response characteristic of temperature in the substrate. These thermal characteristics were calculated by thermal FDTD simulation. For an InGaP/GaAs HBT, a step response characteristic for a square-wave voltage signal input was simulated using a large-signal model of the HBT connecting the multi-stage thermal RC-ladder network. The result was verified experimentally. Additionally, for an RF-amplifier using the HBT, the 3rd-order intermodulation distortion caused by the thermal memory effect was simulated and this result was also verified experimentally. From these verifications, a multi-stage thermal RC-ladder network can be used to accurately design super linear microwave power amplifiers and linearizers.
Year
DOI
Venue
2007
10.1093/ietele/e90-c.9.1658
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
thermal memory effect, thermal resistance, thermal capacitance, thermal RC-ladder network, IMD3
Transient response,Thermal mass,Electronic engineering,Heat equation,Intermodulation,Engineering,Transistor,Distortion,Amplifier,Thermal resistance
Journal
Volume
Issue
ISSN
E90C
9
1745-1353
Citations 
PageRank 
References 
3
0.90
0
Authors
3
Name
Order
Citations
PageRank
Yukio Takahashi130.90
Ryo Ishikawa287.74
Kazuhiko Honjo31211.55