Name
Abstract | ||
|---|---|---|
This paper presents a review of the recent studies based on the concept of Bipolar Silicon Controlled Rectifier (BSCR) devices across a variety of BiCMOS technologies. Examples of both BSCR design and application are presented, ranging from a 0.25μm Si–Ge process with a shallow epi-layer, up to 250V bipolar process. The BSCR device characteristics are discussed based on both 2-D physical process and device simulation and by the test structure ESD characterization. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2004.12.013 | Microelectronics Reliability |
Keywords | Field | DocType |
silicon controlled rectifier | Design for testing,BiCMOS,Electrostatic discharge,Bicmos technology,Electronic engineering,Ranging,Engineering,Bipolar process,Test structure,Electrical engineering,Silicon-controlled rectifier | Journal |
Volume | Issue | ISSN |
45 | 3 | 0026-2714 |
Citations | PageRank | References |
2 | 1.28 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| V.A. Vashchenko | 1 | 5 | 3.15 |
| P. Hopper | 2 | 4 | 3.01 |