Name
Abstract | ||
|---|---|---|
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic functionality of the memory cell used so far and the main cell architecture consolidated today. The NOR cell is basically a floating-gate MOS transistor, programmed by channel hot electron and erased by Fowler-Nordheim tunneling. The main reliability issues, such as charge ret... |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JPROC.2003.811702 | Proceedings of the IEEE |
Keywords | DocType | Volume |
Flash memory,Random access memory,Nonvolatile memory,Semiconductor memory,Writing,Costs,MOSFETs,CMOS technology,Power supplies,EPROM | Journal | 91 |
Issue | ISSN | Citations |
4 | 0018-9219 | 84 |
PageRank | References | Authors |
8.55 | 3 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| ROBERTO BEZ | 1 | 213 | 35.23 |
| EMILIO CAMERLENGHI | 2 | 84 | 8.55 |
| ALBERTO MODELLI | 3 | 84 | 8.55 |
| ANGELO VISCONTI | 4 | 105 | 18.12 |