Name
Abstract | ||
|---|---|---|
Poly-Si TFT (Thin Film transistor) fabricated below 170 degrees C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm(2)/Vsec. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1093/ietele/e88-c.4.667 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
poly-Si, TFT plastic substrate | Thin-film transistor,Pattern recognition,Computer science,Artificial intelligence,Oxide thin-film transistor,Optoelectronics | Journal |
Volume | Issue | ISSN |
E88C | 4 | 1745-1353 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jang Yeon Kwon | 1 | 1 | 0.96 |
| Do Young Kim | 2 | 22 | 8.74 |
| Hans S. Cho | 3 | 1 | 0.63 |
| Kyung Bae Park | 4 | 1 | 0.63 |
| Ji Sim Jung | 5 | 1 | 0.63 |
| Jong Man Kim | 6 | 8 | 1.51 |
| Young Soo Park | 7 | 40 | 6.28 |
| Takashi Noguchi | 8 | 1 | 0.96 |