Name
Abstract | ||
|---|---|---|
The correlation between ohmic contact resistivity (p(c)) and transconductance (g(m)) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize p(c) precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transconductance (g(m0)), which is not influenced by the source resistance, can be estimated. The g(m0) thus obtained is between 179 and 206 mS/mm. Then, it became possible to calculate the correlation between g(m) and p(c). We found that p(c) should be below 10(-5) Omega cm(2) for the improvement of g(m) in AlGaN/GaN HEMT when R-s/h = 400 Q/square. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1093/ietele/e89-c.7.1064 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
AlGaN/GaN HEMT, contact resistance, transconductance | Contact resistance,Field-effect transistor,Electronic engineering,Sheet resistance,Transconductance,Engineering,Transistor,High-electron-mobility transistor,Electrical resistivity and conductivity,Ohmic contact | Journal |
Volume | Issue | ISSN |
E89C | 7 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yoshikazu Hirose | 1 | 0 | 0.34 |
| Akira Honshio | 2 | 0 | 0.34 |
| Takeshi Kawashima | 3 | 14 | 3.17 |
| Motoaki Iwaya | 4 | 0 | 0.34 |
| Satoshi Kamiyama | 5 | 0 | 0.34 |
| Michinobu Tsuda | 6 | 0 | 0.34 |
| Hiroshi Amano | 7 | 0 | 1.01 |
| Isamu Akasaki | 8 | 0 | 0.34 |