Name
Title | ||
|---|---|---|
A New Active Pixel Structure With A Pinned Photodiode For Wide Dynamic Range Image Sensors |
Abstract | ||
|---|---|---|
A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1587/elex.2.482 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
CMOS image sensor, wide dynamic range, floating gate | Wide dynamic range,Image sensor,Optics,Electronic engineering,Pixel,Logarithm,Optoelectronics,Photodiode,Physics | Journal |
Volume | Issue | ISSN |
2 | 18 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jongho Park | 1 | 130 | 16.29 |
| Shoji Kawahito | 2 | 270 | 67.13 |
| Yasuo Wakamori | 3 | 0 | 0.34 |