Title
A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s.
Year
DOI
Venue
2010
10.1109/ISSCC.2010.5433949
ISSCC
Keywords
Field
DocType
flash memories,logic gates,nanoelectronics,NAND flash memory,bit rate 6 Mbit/s,block configuration mode,optimized programming algorithm,program throughput,quad-plane architecture,size 34 nm,storage capacity 32 Gbit
Asynchronous communication,Logic gate,Flash memory,Computer science,Chip,Electronic engineering,NAND gate,Decoding methods,Page,Throughput,Computer hardware,Embedded system
Conference
Citations 
PageRank 
References 
9
3.95
1
Authors
32
Name
Order
Citations
PageRank
G. G. Marotta193.95
A. Macerola293.95
A. D'Alessandro3175.56
A. Torsi493.95
C. Cerafogli593.95
C. Lattaro693.95
C. Musilli793.95
D. Rivers893.95
E. Sirizotti993.95
F. Paolini1093.95
G. Imondi1193.95
G. Naso1293.95
G. Santin1393.95
L. Botticchio1493.95
L. De Santis1593.95
L. Pilolli1693.95
M. L. Gallese1793.95
M. Incarnati1893.95
M. Tiburzi1993.95
P. Conenna2093.95
S. Perugini2193.95
V. Moschiano2293.95
W. Di Francesco2393.95
Matt Goldman2493.95
Chris Haid2593.95
D. Di Cicco2693.95
D. Orlandi2793.95
F. Rori2893.95
Massimo Rossini29185.31
Tommaso Vali3094.29
R. Ghodsi3193.95
Frank Roohparvar3293.95