Title
Possibility Of Terahertz Injection-Locked Oscillation In An Ingap/Ingaas/Gaas Two-Dimensional Plasmon-Resonant Photomixer
Abstract
We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tinoxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.
Year
DOI
Venue
2007
10.1093/ietele/e90-c.5.949
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
terahertz, plasmon resonance, plasma instability, heterostructure, high-electron-mobility transistor (HEMT)
Photomixing,Oscillation,Surface plasmon resonance,Grating,Optics,Electronic engineering,Terahertz radiation,Engineering,High-electron-mobility transistor,Heterojunction,Plasmon
Journal
Volume
Issue
ISSN
E90C
5
1745-1353
Citations 
PageRank 
References 
0
0.34
1
Authors
5
Name
Order
Citations
PageRank
Mitsuhiro Hanabe111.30
Yahya Moubarak Meziani220.92
Tai-ichi Otsuji32313.08
Eiichi Sano476.98
Tanemasa Asano501.69