Abstract | ||
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This paper presents a UHF rectifier structure to overcome the drawbacks of conventional rectifiers, which cannot simultaneously realize high power conversion efficiency (PCE) and arbitrarily high output voltage. In accordance with our clear analysis policy, a novel rectifier structure based on Dickson charge pump has been developed. Also, a single-stage rectifier circuit has been designed and fabricated in a standard 0.18-mu m complementary metal oxide semiconductor (CMOS) process. Experimental results show that this rectifier can provide 1 V voltage supply at a PCE of 32%, -30dBm incident RF power. |
Year | DOI | Venue |
---|---|---|
2010 | 10.1587/elex.7.1086 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
Radio-frequency identification (RFID), passive transponder, rectifier, power conversion efficiency, charge pump | Energy conversion efficiency,Rectifier,Computer science,Voltage,CMOS,Electronic engineering,Charge pump,RF power amplifier,Precision rectifier,Ultra high frequency,Electrical engineering | Journal |
Volume | Issue | ISSN |
7 | 14 | 1349-2543 |
Citations | PageRank | References |
2 | 0.49 | 2 |
Authors | ||
3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Ji Cui | 1 | 2 | 0.49 |
Junichi Akita | 2 | 83 | 19.41 |
Akio Kitagawa | 3 | 11 | 4.11 |