Name
Abstract | ||
|---|---|---|
The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time. |
Year | DOI | Venue |
|---|---|---|
1966 | 10.1109/PGEC.1966.264348 | IEEE Trans. Electronic Computers |
Keywords | Field | DocType |
voltage,cycle time,writing | Access time,Standby power,Read-write memory,Computer science,Voltage,Electronic engineering,Transistor | Journal |
Volume | Issue | ISSN |
EC | 4 | 0367-7508 |
Citations | PageRank | References |
1 | 0.37 | 0 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Pleshko | 1 | 1 | 0.71 |
| L. M. Terman | 2 | 1 | 0.37 |