Name
Abstract | ||
|---|---|---|
The preparation method and characterization data are described for porous SiC layers grown on the surface of porous silicon (P-Si) wires. Raman scattering spectroscopy, energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) were employed for the characterization. It is shown that in the first approximation, the wire structure of the porous SiC repeats the surface morphology of the porous Si. Some peculiarities of P-SiC surface structure were also observed whose connection with the P-Si surface is not yet clarified. The study of the Raman spectra has permitted to determine the crystalline structure (polytypes) for the SiC layers and shown a feature specific for nano-crystallite materials, which has been analyzed and discussed. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.mejo.2007.07.069 | Microelectronics Journal |
Keywords | Field | DocType |
p-si surface,p-sic surface structure,si nanowire surface,sic layer,porous si,wire structure,crystalline structure,porous silicon,porous sic,porous sic layer,surface morphology,surface structure,energy dispersive spectroscopy,nanowires,raman scattering,carbonization,raman spectra,atomic force microscopy | Composite material,Porous silicon,Raman scattering,Engineering,Spectroscopy,Raman spectroscopy,Porous medium,Nanowire,Energy-dispersive X-ray spectroscopy,Condensed matter physics,Silicon | Journal |
Volume | Issue | ISSN |
39 | 3-4 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. I. Diaz Cano | 1 | 0 | 0.34 |
| T.V. Torchynska | 2 | 1 | 2.88 |
| J. E. Urbina-Alvarez | 3 | 0 | 0.34 |
| G. R. Paredes Rubio | 4 | 0 | 0.34 |
| S. Jiménez Sandoval | 5 | 0 | 0.68 |
| Y. V. Vorobiev | 6 | 0 | 0.34 |