Name
Abstract | ||
|---|---|---|
A 20-GHz low-noise amplifier (LNA) with an active balun fabricated in a 0.25-mu m SiGe BICMOS (f(t) = 47 GHz) technology was presented by the authors in 2004. The LNA achieves close to 7 dB of gain and a noise figure of 4.9 dB with all ports simultaneously matched to 50 Omega with better than -16 dB of return loss. The amplifier is highly linear with an IP1dB of 0 dBm and IIP3 of 9 dBm, while consuming 14 mA of quiescent current from a 3.3-V rail, with temperature-compensated biasing. To the authors' knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of a combined active balun and LNA at 20 GHz, and is the first implementation of an active balun with an LC degenerated emitter-coupled pair. Here we expand on that work, with an analysis of the balun operation and noise optimization of the design. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/JSSC.2005.854603 | IEEE JOURNAL OF SOLID-STATE CIRCUITS |
Keywords | DocType | Volume |
Balun, high frequency, low-noise amplifier, SiGe | Journal | 40 |
Issue | ISSN | Citations |
10 | 0018-9200 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| B. Welch | 1 | 0 | 0.34 |
| K. T. Kornegay | 2 | 12 | 3.31 |
| Hyun-Min Park | 3 | 56 | 8.99 |
| J. Laskar | 4 | 27 | 6.51 |