Name
Abstract | ||
|---|---|---|
Photoluminescence (PL), transmission electron microscopy, Raman scattering spectra and extended X-ray absorption fine structure have been investigated in silicon oxide films enriched by Ge in as-grown state and after their thermal annealing at 800 °C. The dependences of PL peculiarities on the concentration of Ge, as well as on the existence (or absence) of Ge nano-crystallites in silicon oxide films are analyzed. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2692(03)00043-0 | Microelectronics Journal |
Keywords | Field | DocType |
Nano-crystallites,Photoluminescence,Transmission electron microscopy | Crystallite,Transmission electron microscopy,Raman scattering,Spectral line,Silicon oxide,Annealing (metallurgy),Engineering,Nano-,Optoelectronics,Condensed matter physics,Photoluminescence | Journal |
Volume | Issue | ISSN |
34 | 5 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| T.V. Torchynska | 1 | 1 | 2.88 |
| G. Polupan | 2 | 0 | 0.68 |
| J. Palacios Gomez | 3 | 0 | 0.34 |
| A.V. Kolobov | 4 | 0 | 0.34 |