Title
Interface Roughness Effects in Ultra-Thin Tunneling Oxides
Year
DOI
Venue
1998
10.1155/1998/23567
VLSI Design
Field
DocType
Volume
Quantum tunnelling,Oxide,Computer science,Electronic engineering,Planar,Scattering,Surface finish,MOSFET,Silicon
Journal
8
Issue
Citations 
PageRank 
1-4
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
D. Z.-Y. Ting101.35
Erik S. Daniel2224.49
T. C. Mcgill300.68