Name
Abstract | ||
|---|---|---|
A millimeter-wave power amplifier module achieves 140 mW maximum output power and 80 mW output 1-dB gain compression point at 125 GHz. The 0.08 mu m gate length InGaAs/InP composite-channel HEMTs were applied to single-chip coplanar-design amplifier MMIC. The module's output power in this frequency band is a record to the best of our knowledge. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/elex.6.1764 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
millimeter-wave, power amplifier, HEMT | Computer science,Operational transconductance amplifier,Direct-coupled amplifier,Linear amplifier,Electronic engineering,FET amplifier,RF power amplifier,Electrical engineering,Operational amplifier,Gate driver,Amplifier | Journal |
Volume | Issue | ISSN |
6 | 24 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Toshihiko Kosugi | 1 | 0 | 1.35 |
| Hiroki Sugiyama | 2 | 3 | 2.30 |
| Koichi Murata | 3 | 0 | 0.34 |
| Hiroyuki Takahashi | 4 | 6 | 3.48 |
| Akihiko Hirata | 5 | 10 | 5.67 |
| Naoya Kukutsu | 6 | 10 | 6.15 |
| Yuichi Kado | 7 | 33 | 7.60 |
| enoki | 8 | 2 | 3.06 |