Paper Info
Title
Resource-aware sector translation layer for resource-sensitive nand flash-based storage systems
Abstract
As a need for high-density storage capacity increases on many high-end mobile devices such as smartphones, large NAND flash-based storage systems are more commonly used in such smart devices. For these storage systems, however, it becomes a challenge to use large NAND flash without incurring a large system overhead such as a large memory requirement. We propose a novel flash translation layer (FTL), called Resource-Aware Sector Translation Layer (RAST), which is optimized to reduce the memory footprint of an FTL for resource-sensitive storage systems. RAST is based on a hybrid mapping scheme which uses a group of blocks as a unit of mapping so that a small mapping table can cover a large number of blocks. RAST further saves the memory footprint by using an on-demand metadata management scheme which brings only recently accessed metadata into memory. RAST employs a sampling-based wear-leveling scheme which provides competitive wear-leveling performance with very small memory. Our experimental results show that RAST can achieve a good performance level for resource-constraint storage systems with the small memory footprint. For 32 GB NAND flash memory, RAST can achieve the write throughput of up to 57 MB/s using only 34 kB memory.
Year
DOI
Venue
2012
10.1109/TCE.2012.6227448
IEEE Trans. Consumer Electronics
Keywords
Field
DocType
large memory requirement,high-end mobile devices,resource-aware sector translation layer,on-demand metadata management,data structure,resource-sensitive storage systems,sampling-based wear-leveling scheme,storage management,smartphones,resource-sensitive nand flash-based storage systems,hybrid mapping scheme,memory footprint,flash translation layer,meta data,high-density storage capacity,nand flash memory,flash memories,mobile storage system,smart devices,availability,degradation,mobile communication,memory management
Data structure,Flash memory,Flash file system,Computer science,Computer data storage,NAND gate,Memory management,Computer hardware,Memory footprint,Computer memory,Embedded system
Journal
Volume
Issue
ISSN
58
2
0098-3063
Citations 
PageRank 
References 
0
0.34
0
Authors
4
Name
Order
Citations
PageRank
Keonsoo Ha1543.99
Tae-jin Kim211121.38
Byoung Young Ahn300.68
Jihong Kim41336104.37