Paper Info
Title
Monolithic active pixel sensor realized in SOI technology—concept and verification
Abstract
The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details.
Year
DOI
Venue
2005
10.1016/j.microrel.2004.10.014
Microelectronics Reliability
Field
DocType
Volume
Silicon on insulator,Pixel detector,Electronic engineering,CMOS sensor,Engineering,Integrated circuit,Electrical engineering,Silicon
Journal
45
Issue
ISSN
Citations 
7
0026-2714
0
PageRank 
References 
Authors
0.34
0
12
Name
Order
Citations
PageRank
H. Niemiec100.34
A. Bulgheroni200.34
M. Caccia300.34
P. Grabiec400.68
M. Grodner500.68
M. Jastrzab600.34
W. Kucewicz700.68
K. Kucharski821.17
S. Kuta972.18
J. Marczewski1021.84
M. Sapor1100.68
D. Tomaszewski1201.01