Name
Title | ||
|---|---|---|
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps |
Abstract | ||
|---|---|---|
We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.mejo.2005.02.001 | Microelectronics Journal |
Keywords | Field | DocType |
Quantum dot laser,Linewidth enhancement factor,Indirect short-period superlattice,Indium arsenide | Semiconductor laser theory,Direct and indirect band gaps,Laser linewidth,Quantum dot laser,Band gap,Superlattice,Electronic engineering,Engineering,Quantum well,Quantum dot,Condensed matter physics | Journal |
Volume | Issue | ISSN |
36 | 3 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Sun | 1 | 0 | 1.01 |
| Richard A. Soref | 2 | 2 | 3.47 |
| Jacob B. Khurgin | 3 | 1 | 2.32 |