Name
Title | ||
|---|---|---|
Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications |
Abstract | ||
|---|---|---|
The two main topics with respect to better gallium nitride (GaN)-based optoelectronic device performance are the improvement of crystal quality and of light extraction. Concerning the first topic, the epitaxial growth of GaN-related materials has to be improved. Since native substrates with good quality are still expensive, foreign substrates like sapphire or silicon which are much cheaper are used, but they introduce a lattice as well as a thermal mismatch leading to detrimental crystal defects. Several approaches to reduce the defect density exist, but in most cases they are coupled with a much higher technological effort. We present an alternative solution to decrease the defect density by the growth of GaN nanostructures, where the small footprint and high aspect ratio leads to a much lower influence of the substrate. Metal-organic vapour-phase epitaxy of GaN nanostructures and InGaN/GaN multi-quantum wells was carried out in a vertical reactor with close-coupled showerhead. Studies on the morphologic properties have been carried out by scanning electron microscopy and energy-dispersive X-ray spectroscopy to reveal the influence of growth parameters and material composition. Cathodoluminescence measurements show the good optical properties of the GaN as well as of the InGaN/GaN structures. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.mejo.2008.07.054 | Microelectronics Journal |
Keywords | Field | DocType |
defect density,growth parameter,gan nanostructures,gan multi-quantum well,core-shell,nanoled,gan structure,optoelectronic application,crystal quality,good optical property,epitaxial growth,metal-organic vapour-phase epitaxy,good quality,gallium nitride nanostructures,detrimental crystal defect,nanostructures,gallium nitride,scanning electron microscopy,high aspect ratio | Gallium nitride,Crystallographic defect,Cathodoluminescence,Scanning electron microscope,Engineering,Sapphire,Optoelectronics,Silicon,Nanostructure,Epitaxy | Journal |
Volume | Issue | ISSN |
40 | 2 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Fündling | 1 | 0 | 0.34 |
| U. Jahn | 2 | 0 | 1.01 |
| A. Trampert | 3 | 0 | 0.34 |
| H. Riechert | 4 | 0 | 0.34 |
| H. -H. Wehmann | 5 | 0 | 0.34 |
| A. Waag | 6 | 1 | 0.82 |