Name
Abstract | ||
|---|---|---|
Focusing on internal high-voltage (V/sub pp/) switching and generation for low-voltage NAND flash memories, this paper describes a V/sub (pp)/ switch, row decoder, and charge-pump circuit. The proposed nMOS V/sub pp/ switch is composed of only intrinsic high-voltage transistors without channel implantation, which realizes both reduction of the minimum operating voltage and elimination of the V/sub... |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1109/4.974549 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
Switches,Voltage,Switching circuits,Charge pumps,Decoding,Flash memory,Energy consumption,MOS devices,Leakage current,Batteries | Journal | 37 |
Issue | ISSN | Citations |
1 | 0018-9200 | 21 |
PageRank | References | Authors |
3.07 | 4 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Toru Tanzawa | 1 | 66 | 14.08 |
| Tomoharu Tanaka | 2 | 32 | 32.18 |
| Ken Takeuchi | 3 | 30 | 8.01 |
| Hiroshi Nakamura | 4 | 21 | 3.07 |