Title
Micro inductor for RF ICs with NiCuZn ferrite film
Abstract
A thin-film inductor with Ni0.3Cu0.1Zn0.6Fe2O4 film for the RF range is fabricated by using IC compatible processes, which is composed of SiO2 insulating layer / NiCuZn ferrite film layer / SiO2 insulating layer / Cu coils. The magnetic properties of Ni0.3Cu0.1Zn0.6Fe2O4 thin film are discussed. High frequency performances of the micro-inductor are measured using network analyzer from 50MHz to 9GHz. The inductance (L) of the micro-inductor is 1.976nH and the quality factor (Q) is 5.06 at 1GHz. Compared with micro-inductor that has same structure but no magnetic film, L and Q are enhanced about 7.6% and 8.4%, respectively. The inductance (L) of the micro-inductor is 2.008nH and the quality factor (Q) is 9.19 at 2GHz. Compared with micro-inductor that has same structure but no magnetic film, L and Q are enhanced about 7.7% and 3.6%, respectively. With the improvement of L and Q, the size of ferrite thin-film inductor can be reduced effectively.
Year
DOI
Venue
2011
10.1109/NEMS.2011.6017417
NEMS
Keywords
Field
DocType
rf,q-factor,ferrite film,quality factor,nicuzn ferrite film,ni0.3cu0.1zn0.6fe2o4,nickel compounds,magnetic property,copper compounds,radiofrequency integrated circuits,micro inductor,microinductor,frequency 50 mhz to 9 ghz,frequency 2 ghz,network analyzer,silicon compounds,sio2 insulating layer,frequency 1 ghz,rf ic,thin-film inductor,inductance,thin film inductors,ferrites,sio2,high frequency,q factor,thin film
Ferrite (magnet),Network analyzer (electrical),Composite material,Q factor,Analytical chemistry,Inductance,Magnetic films,Nickel compounds,Inductor,Thin film,Materials science
Conference
Volume
Issue
ISBN
null
null
978-1-61284-775-7
Citations 
PageRank 
References 
0
0.34
1
Authors
4
Name
Order
Citations
PageRank
Feng Li19021.99
Shuangli Ye200.68
Shifeng Li321.06
Xinzhi Shi400.68