Name
Abstract | ||
|---|---|---|
A floating millivolt reference circuit to generate a PTAT current was developed by using MOSFETs operated in the subthreshold region. The circuit generates a floating voltage of about 10 mV. The variations in the reference are 2.7 % in a temperature range from -20 to 100 ûC. The accuracy of the reference circuit can be improved to 0.3 % with a correction technique using a curvature-correction circuit. The total power consumption of the circuit was 4.6 W at 100 ûC. I. INTRODUCTION Intelligent-network systems with various smart-sensor de- vices are expected to be developed that will spread all over the world to enable infrastructures to be constructed for the information age. Such network systems will require a huge number of sensor LSIs that measure various physical data from our surroundings, store and process these measured data, and output them on demand. As these sensors must operate for long periods of time, the available energy resources -whether small batteries, energy harvesting, or both- limit their overall operation. One possible method of minimizing the energy they consume is to design a circuit in the subthreshold region of MOSFETs. The sensing of temperature by these LSIs is one of their most fundamental applications. A sensory signal that is propor- tional to absolute temperature (PTAT) is necessary to construct a temperature sensor. However, as the subthreshold current of MOSFET is an exponential function of the gate-source voltage, the PTAT current cannot be generated easily. In this paper, we propose a floating millivolt reference circuit that can be used to generate PTAT current in circuits (1). In the following, Section II describes the method of generating PTAT current for the temperature sensor, Section III presents the floating millivolt reference with the results of SPICE simulation, and Section IV describes the curvature-correction techniques to obtain a high-accuracy reference. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.3169/itej.63.1877 | The Journal of The Institute of Image Information and Television Engineers |
Field | DocType | Volume |
Volt,Reference circuit,Computer science,Voltage,Signal generator,Electronic engineering,Resistor,Subthreshold conduction,MOSFET,Electronic circuit,Electrical engineering | Conference | 63 |
Issue | Citations | PageRank |
12 | 1 | 0.39 |
References | Authors | |
4 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ken Ueno | 1 | 124 | 13.27 |
| Tetsuya Hirose | 2 | 183 | 38.44 |
| Tetsuya Asai | 3 | 121 | 26.53 |
| Yoshihito Amemiya | 4 | 126 | 33.34 |