Name
Title | ||
|---|---|---|
Self-organized anisotropic strain engineering: a new concept for quantum dot ordering |
Abstract | ||
|---|---|---|
We have established a new concept for creating ordered arrays of quantum dots by self-organized epitaxy. The concept is based on self-organized anisotropic strain engineering of strained layer templates and is demonstrated for (In,Ga)As/GaAs super-lattice structures on GaAs (100) and strain-induced (In,Ga)As growth instability on GaAs (311)B. The well-defined one- and two-dimensional networks of InAs quantum dots grown on top of these templates are of excellent structural and optical quality. This breakthrough, thus, allows for novel fundamental studies and device operation principles based on single and multiple carrier- and photon-, and coherent quantum interference effects. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1109/JPROC.2003.818322 | Proceedings of The IEEE |
Keywords | DocType | Volume |
III-V semiconductors,arrays,atomic force microscopy,gallium arsenide,indium compounds,internal stresses,molecular beam epitaxial growth,photoluminescence,quantum interference phenomena,semiconductor quantum dots,semiconductor superlattices,AFM images,GaAs,GaAs (100),GaAs (311)B,InAs,InGaAs-GaAs,InGaAs/GaAs superlattice structures,MBE,low-temperature PL spectra,one-dimensional networks,optical quality,ordered quantum dot arrays,quantum dot ordering,quantum interference effects,self-organized anisotropic strain engineering,self-organized epitaxy,strain-induced (In,Ga)As growth instability,strained layer templates,structural quality,two-dimensional networks | Journal | 9 |
Issue | ISSN | Citations |
11 | 0018-9219 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| R. Notzel | 1 | 0 | 0.68 |
| T. Mano | 2 | 0 | 0.34 |
| Qian Gong | 3 | 0 | 0.68 |
| J. H. Wolter | 4 | 0 | 0.34 |