Name
Abstract | ||
|---|---|---|
This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area- efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80 nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 m with under 1uW power consumption for providing 0.7degC effective resolution at 1 sample/sec processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1109/ISCAS.2008.4542112 | Microelectronics Journal |
Keywords | DocType | Volume |
chip,ring oscillator,bandgap reference | Conference | 38 |
Issue | ISSN | ISBN |
10-11 | Microelectronics Journal | 978-1-4244-1684-4 |
Citations | PageRank | References |
17 | 1.60 | 6 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chan Kyung Kim | 1 | 20 | 7.00 |
| Jae-Goo Lee | 2 | 19 | 3.04 |
| Young-Hyun Jun | 3 | 60 | 11.41 |
| Chil-Gee Lee | 4 | 47 | 16.85 |
| Bai-Sun Kong | 5 | 153 | 31.93 |