Name
Title | ||
|---|---|---|
An extended majority-carrier approach for the DC and small-signal simulation of ion-implanted mesfets on compensated and p-type substrates |
Abstract | ||
|---|---|---|
The paper proposes an extended majority-carrier dc and ac two-dimensional physical model for the simulation of ion-implanted MESFETs on semi-insulating and p-type substrates, including the static and dynamic treatment of partly ionized impurity levels. The numerical implementation of the model is discussed, and it is shown how numerical ill-conditioning problems suggest the implementation of a full two-carrier model for the simulation of devices with undepleted p-type substrates. A discussion is presented on the interpretation of rate-dependent anomalies related to the frequency behaviour of the small-signal parameters, and the importance of simulating a backgate electrode is stressed. Finally, comparisons are given with ac and dc data measured on p-buried layer Siemens devices. |
Year | DOI | Venue |
|---|---|---|
1990 | 10.1002/ett.4460010408 | EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS |
Keywords | Field | DocType |
ion implantation | Impurity,Ionization,Computer science,Electronic engineering,Electrode,Ion,Siemens | Journal |
Volume | Issue | ISSN |
1 | 4 | 1120-3862 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Giovanni Ghione | 1 | 2 | 1.86 |
| Augusto Benvenuti | 2 | 0 | 0.34 |
| Marco Pirola | 3 | 2 | 2.20 |
| Carlo Naldi | 4 | 0 | 0.68 |