Paper Info
Title
Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s
Abstract
We present a multi-dimensional, atomistic, quantum transport simulation approach to investigate the performances of realistic nanoscale transistors for various geometries and material systems. The central computation consists in solving the Schrödinger equation with open boundary conditions several thousand times. To do that, a Wave Function approach is used since it can be relatively easily parallelized. To further improve the computational efficiency, three additional levels of parallelization are identified, the work load is optimally balanced between the CPUs, computational interleaving is applied where possible, and a mixed precision scheme is introduced. Using two different device types, a high electron mobility and a band-to-band tunneling transistor, sustained performances up to 1.28 PFlop/s in double precision (55% of the peak performance) and 1.44 PFlop/s in mixed precision are reached on 221,400 cores on the CRAY-XT5 Jaguar at Oak Ridge National Lab.
Year
DOI
Venue
2011
10.1145/2063384.2063387
SC
Keywords
Field
DocType
Schrodinger equation,high electron mobility transistors,multiprocessing systems,nanoelectronics,performance evaluation,tunnelling,wave functions,CRAY-XT5 Jaguar,Oak Ridge National Lab,Schrodinger equation,atomistic nanoelectronic device engineering,band-to-band tunneling transistor,computational interleaving,high electron mobility transistor,mixed precision scheme,multidimensional quantum transport simulation approach,open boundary conditions,realistic nanoscale transistors,wave function approach
Quantum tunnelling,Boundary value problem,Nanoelectronics,Computer science,Parallel computing,Double-precision floating-point format,Transistor,Interleaving,Electron mobility,Computation
Conference
Citations 
PageRank 
References 
1
0.41
10
Authors
4
Name
Order
Citations
PageRank
Mathieu Luisier1568.55
Timothy B. Boykin250.98
Gerhard Klimeck312926.11
Wolfgang Fichtner462984.99